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Nat Mater. 2015 Feb;14(2):164-8. doi: 10.1038/nmat4145. Epub 2014 Dec 1.

Coherent control of single spins in silicon carbide at room temperature.

Author information

1
3rd Institute of Physics and Research Center SCOPE, University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany.
2
Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden.
3
Beijing Computational Science Research Center, Beijing 100084, China.
4
Japan Atomic Energy Agency, Takasaki, Gunma 370-1292, Japan.
5
1] Wigner Research Centre for Physics, Hungarian Academy of Sciences, PO Box 49, H-1525, Budapest, Hungary [2] Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111, Budapest, Hungary.

Abstract

Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond or individual phosphorus dopants in silicon have shown spectacular progress, but either lack established nanotechnology or an efficient spin/photon interface. Silicon carbide (SiC) combines the strength of both systems: it has a large bandgap with deep defects and benefits from mature fabrication techniques. Here, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.

PMID:
25437256
DOI:
10.1038/nmat4145

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