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Phys Rev Lett. 2014 Oct 10;113(15):157601. Epub 2014 Oct 6.

Conditional control of donor nuclear spins in silicon using stark shifts.

Author information

1
London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom and Department of Materials, Oxford University, Oxford OX1 3PH, United Kingdom.
2
London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom.
3
Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada.
4
Institute for Crystal Growth, Max-Born Strasse 2, D-12489 Berlin, Germany.
5
Physikalisch-Technische Bundesanstalt, D-38116 Braunschweig, Germany.
6
Vitcon Projectconsult GmbH, 07745 Jena, Germany.
7
London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom and Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom.

Abstract

Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors in isotopically purified silicon-28. We then demonstrate two different methods to use a dc electric field combined with an applied resonant radio-frequency (rf) field to conditionally control donor nuclear spins. The first method combines an electric-field induced conditional phase gate with standard rf pulses, and the second one simply detunes the spins off resonance. Finally, we consider different strategies to reduce the effect of electric field inhomogeneities and obtain above 90% process fidelities.

PMID:
25375741
DOI:
10.1103/PhysRevLett.113.157601
[Indexed for MEDLINE]

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