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Adv Mater. 2014 Dec 23;26(48):8185-91. doi: 10.1002/adma.201403304. Epub 2014 Oct 27.

A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

Author information

1
Bayerisches Geoinstitut, Universität Bayreuth, Universitätsstrasse 30, D-95447, Bayreuth, Germany.

Abstract

An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.

KEYWORDS:

bandgap engineering; direct-bandgap semiconductors; electronic transport; transition metal oxides

PMID:
25348375
DOI:
10.1002/adma.201403304

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