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Nano Lett. 2014 Nov 12;14(11):6275-80. doi: 10.1021/nl502603d. Epub 2014 Oct 14.

Chloride molecular doping technique on 2D materials: WS2 and MoS2.

Author information

1
School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University , West Lafayette, Indiana 47907, United States.

Abstract

Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kΩ·μm and 0.5 kΩ·μm, respectively. The significant reduction of the Rc is attributed to the achieved high electron-doping density, thus a significant reduction of Schottky barrier width. As a proof-of-concept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 μA/μm, an on/off ratio of 4 × 10(6), and a peak field-effect mobility of 60 cm(2)/(V·s). This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nanoelectronic devices.

KEYWORDS:

MoS2; Schottky barrier; TMDs; WS2; contact resistance; molecular doping

PMID:
25310177
DOI:
10.1021/nl502603d

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