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Nano Lett. 2014 Nov 12;14(11):6463-8. doi: 10.1021/nl502998z. Epub 2014 Oct 14.

Nanoscale conducting oxide PlasMOStor.

Author information

1
Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology , Pasadena, California 91125, United States.

Abstract

We experimentally demonstrate an ultracompact PlasMOStor, a plasmon slot waveguide field-effect modulator based on a transparent conducting oxide active region. By electrically modulating the conducting oxide material deposited into the gaps of highly confined plasmonic slot waveguides, we demonstrate field-effect dynamics giving rise to modulation with high dynamic range (2.71 dB/μm) and low waveguide loss (∼0.45 dB/μm). The large modulation strength is due to the large change in complex dielectric function when the signal wavelength approaches the surface plasmon resonance in the voltage-tuned conducting oxide accumulation layer. The results provide insight about the design of ultracompact, nanoscale modulators for future integrated nanophotonic circuits.

KEYWORDS:

Plasmonics; active plasmonics; epsilon near-zero material; field-effect modulation; modulator; nanocircuits; plasmonic slot waveguide; transparent conducting oxide

PMID:
25302668
DOI:
10.1021/nl502998z

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