The origin of excellent gate-bias stress stability in organic field-effect transistors employing fluorinated-polymer gate dielectrics

Adv Mater. 2014 Nov 12;26(42):7241-6. doi: 10.1002/adma.201402363. Epub 2014 Sep 29.

Abstract

Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed.

Keywords: fluorinated polymers; gate-bias stabilities; organic field-effect transistors.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Electric Capacitance
  • Equipment Design
  • Halogenation
  • Hydrophobic and Hydrophilic Interactions
  • Kinetics
  • Nitrogen / chemistry
  • Polymers / chemistry*
  • Polystyrenes / chemistry
  • Semiconductors*
  • Silicon Dioxide / chemistry
  • Transistors, Electronic*

Substances

  • Polymers
  • Polystyrenes
  • Silicon Dioxide
  • Nitrogen