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Nat Mater. 2014 Dec;13(12):1096-101. doi: 10.1038/nmat4064. Epub 2014 Aug 24.

Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors.

Author information

1
1] Department of Physics, University of Washington, Seattle, Washington 98195, USA [2].
2
1] Department of Physics, University of Warwick, Coventry, CV4 7AL, UK [2].
3
Department of Physics, University of Warwick, Coventry, CV4 7AL, UK.
4
Department of Material Science and Engineering, University of Washington, Seattle, Washington 98195, USA.
5
Department of Physics, University of Washington, Seattle, Washington 98195, USA.
6
Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China.
7
1] Department of Physics, University of Washington, Seattle, Washington 98195, USA [2] Department of Material Science and Engineering, University of Washington, Seattle, Washington 98195, USA.

Abstract

Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers and high-speed transistors. Creating analogous heterojunctions between different 2D semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral heteroepitaxy using physical vapour transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.

PMID:
25150560
DOI:
10.1038/nmat4064

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