Format

Send to

Choose Destination
Sci Rep. 2014 Aug 21;4:6142. doi: 10.1038/srep06142.

Nano-artifact metrics based on random collapse of resist.

Author information

1
Graduate School of Environment and Information Sciences, Yokohama National University, Hodogaya, Yokohama, Kanagawa 240-8501, Japan.
2
Dai Nippon Printing Co. Ltd., 250-1 Wakashiba, Kashiwa, Chiba 277-0871, Japan.
3
Photonic Network Research Institute, National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan.
4
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan.

Abstract

Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.

Supplemental Content

Full text links

Icon for Nature Publishing Group Icon for PubMed Central
Loading ...
Support Center