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Nanoscale Res Lett. 2014 Jun 2;9(1):280. doi: 10.1186/1556-276X-9-280. eCollection 2014.

Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition.

Author information

1
Department of Electrophysics, National Chiao-Tung University, Hsinchu 30010, Taiwan.
2
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan.
3
Department of Photonic Engineering, Yuan-Ze University, Taoyuan 32003, Taiwan.
4
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

Abstract

In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.

KEYWORDS:

CIGS; Femtosecond; Photoluminescence; Pulsed laser deposition; Pump probe

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