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Nanoscale Res Lett. 2014 Apr 30;9(1):196. doi: 10.1186/1556-276X-9-196. eCollection 2014.

Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperature.

Author information

1
State Key Laboratory of Complex Nonferrous Metal Resources Clear Utilization/Silicon Metallurgy and Silicon Material Engineering Research Center of Universities in Yunnan Province, Kunming 650093, China ; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China.
2
Faculty of Physical Science and Technology, Yunnan University, Kunming 650091, China.
3
Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China.
4
State Key Laboratory of Complex Nonferrous Metal Resources Clear Utilization/Silicon Metallurgy and Silicon Material Engineering Research Center of Universities in Yunnan Province, Kunming 650093, China.

Abstract

In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the 'one-pot procedure' metal-assisted chemical etching (MACE) method in the HF/H2O2/AgNO3 system at room temperature. The effects of H2O2 concentration on the nanostructure of silicon nanowires (SiNWs) were investigated. The experimental results indicate that porous structure can be introduced by the addition of H2O2 and the pore structure could be controlled by adjusting the concentration of H2O2. The H2O2 species replaces Ag(+) as the oxidant and the Ag nanoparticles work as catalyst during the etching. And the concentration of H2O2 influences the nucleation and motility of Ag particles, which leads to formation of different porous structure within the nanowires. A mechanism based on the lateral etching which is catalyzed by Ag particles under the motivation by H2O2 reduction is proposed to explain the PSiNWs formation.

KEYWORDS:

Lightly doped Si substrate; Porous silicon nanowires; Self-electrophoresis model; ‘One-pot procedure’ MACE

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