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Phys Rev Lett. 2014 May 9;112(18):187601. Epub 2014 May 5.

Electrically and mechanically tunable electron spins in silicon carbide color centers.

Author information

1
Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA and Center for Spintronics and Quantum Computation, University of California, Santa Barbara, Santa Barbara, California 93106, USA.
2
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, Santa Barbara, California 93106, USA.
3
Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary and Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping, Sweden.
4
Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping, Sweden.
5
Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, PO Box 49, H-1525 Budapest, Hungary and Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., H-1111 Budapest, Hungary.

Abstract

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields.

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