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Appl Opt. 2014 Apr 1;53(10):B8-11. doi: 10.1364/AO.53.0000B8.

Optical absorption spectra as a useful tool to find parameters of deep impurity centers in semiconductors.

Abstract

We analyze physical models accounting for deep-level conduction band transitions to describe impurity absorption spectra in tetrahedral-structured semiconductors. The investigations were carried out for ZnSe crystals doped with transition metals (Ti, V, Cr, Mn, Fe, Co, Ni) from a vapor phase. It was shown that the impurities provide acceptor centers with ground state energy offset by 0.3-0.6 eV from the edge of the conduction band, forming long-wave bands in the absorption spectra of the materials studied.

PMID:
24787220
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