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ACS Appl Mater Interfaces. 2014 May 28;6(10):7014-9. doi: 10.1021/am501690g. Epub 2014 May 7.

Improvement of Al2O3 films on graphene grown by atomic layer deposition with pre-H2O treatment.

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1
State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences , Shanghai 200050, China.

Abstract

We improve the surface of graphene by atomic layer deposition (ALD) without the assistance of a transition layer or surface functionalization. By controlling gas-solid physical adsorption between water molecules and graphene through the optimization of pre-H2O treatment and two-step temperature growth, we directly grew uniform and compact Al2O3 films onto graphene by ALD. Al2O3 films, deposited with 4-cycle pre-H2O treatment and 100-200 °C two-step growing process, presented a relative permittivity of 7.2 and a breakdown critical electrical field of 9 MV/cm. Moreover, the deposition of Al2O3 did not introduce any detective defects or disorders in graphene.

PMID:
24786612
DOI:
10.1021/am501690g
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