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Nat Nanotechnol. 2014 May;9(5):372-7. doi: 10.1038/nnano.2014.35. Epub 2014 Mar 2.

Black phosphorus field-effect transistors.

Author information

1
State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
2
Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.

Abstract

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

PMID:
24584274
DOI:
10.1038/nnano.2014.35

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