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ACS Nano. 2014 Mar 25;8(3):2369-76. doi: 10.1021/nn405827t. Epub 2014 Feb 28.

Comprehensive physical model of dynamic resistive switching in an oxide memristor.

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Department of Electrical Engineering and Computer Science, University of Michigan , Ann Arbor, Michigan 48109, United States.


Memristors have been proposed for a number of applications from nonvolatile memory to neuromorphic systems. Unlike conventional devices based solely on electron transport, memristors operate on the principle of resistive switching (RS) based on redistribution of ions. To date, a number of experimental and modeling studies have been reported to probe the RS mechanism; however, a complete physical picture that can quantitatively describe the dynamic RS behavior is still missing. Here, we present a quantitative and accurate dynamic switching model that not only fully accounts for the rich RS behaviors in memristors in a unified framework but also provides critical insight for continued device design, optimization, and applications. The proposed model reveals the roles of electric field, temperature, oxygen vacancy concentration gradient, and different material and device parameters on RS and allows accurate predictions of diverse set/reset, analog switching, and complementary RS behaviors using only material-dependent device parameters.


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