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Nanoscale Res Lett. 2014 Jan 13;9(1):19. doi: 10.1186/1556-276X-9-19.

Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi.

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1
LPCNO, INSA-UPS-CNRS, Université de Toulouse, 135 Avenue de Rangueil, Toulouse F-31400, France. mazzucat@insa-toulouse.fr.

Abstract

The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.

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