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Nano Lett. 2014 Feb 12;14(2):813-8. doi: 10.1021/nl404160u. Epub 2013 Dec 30.

Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

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1
Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.

Abstract

We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

PMID:
24369783
DOI:
10.1021/nl404160u
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