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Nanoscale. 2014;6(3):1691-7. doi: 10.1039/c3nr05218d.

Constructing metallic nanoroads on a MoS₂ monolayer via hydrogenation.

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Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632, Singapore.


Monolayer transition metal dichalcogenides recently emerged as a new family of two-dimensional materials potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of a finite band gap. Many proposed applications require efficient transport of charge carriers within these semiconducting monolayers. However, constructing a stable conducting nanoroad on these atomically thin semiconductors is still a challenge. Here we demonstrate that hydrogenation on the surface of a MoS₂ monolayer induces a semiconductor-metal transition, and strip-patterned hydrogenation is able to generate a conducting nanoroad. The band-gap closing arises from the formation of in-gap hybridized states mainly consisting of Mo 4d orbitals, as well as the electron donation from hydrogen to the lattice host. Ballistic conductance calculations reveal that such a nanoroad on the MoS₂ surface exhibits an integer conductance, indicating small carrier scattering, and thus is ideal for serving as a conducting channel or an interconnect without compromising the mechanical and structural integrity of the monolayer.


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