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Nanoscale Res Lett. 2013 Dec 5;8(1):510. doi: 10.1186/1556-276X-8-510.

Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy.

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Center for Analysis and Testing, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China.


The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111) surface at approximately 750°C. Scanning tunneling spectra show that the film exhibits a semiconducting character with a band gap of approximately 0.85 eV. Compared with elemental Fe, the Fe 2p peaks of the film exhibit a lower spin-orbit splitting (-0.3 eV) and the Fe 2p3/2 level has a smaller full-width at half maximum (-0.6 eV) and a higher binding energy (+0.3 eV). Quantitative XPS analysis shows that the c (4 × 8) phase is in the FeSi2 stoichiometry regime. The c (4 × 8) pattern could result from the ordered arrangement of defects of Fe vacancies in the buried Fe layers.

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