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Nanoscale. 2013 Nov 21;5(22):10829-34. doi: 10.1039/c3nr03801g. Epub 2013 Oct 1.

A ZnO nanowire-based photo-inverter with pulse-induced fast recovery.

Author information

1
Department of Physics, Yonsei University, Seoul 120-749, Korea. semicon@yonsei.ac.kr.

Abstract

We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.

PMID:
24084851
DOI:
10.1039/c3nr03801g

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