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ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9344-8. doi: 10.1021/am403609y. Epub 2013 Sep 26.

Single ZnO microrod ultraviolet photodetector with high photocurrent gain.

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State Key Laboratory of Bioelectronics, Southeast University , Nanjing 210096, China.


An Ag/ZnO microrod/Ag ultraviolet photodetector is fabricated, the ZnO microrod shows a hexagonal whispering gallery cavity structure. Upon a 325 nm ultraviolet illumination, the device shows a high sensitivity of 4 × 10(4) A/W and a high photocurrent gain of 1.5 × 10(5) at 5 V bias. Under different illumination power P, the photocurrent Ilight obeys a power law relation Ilight ∝ P(0.69). The high performance is probably attributed to a Schottky barrier at Ag/ZnO interface and optical whispering gallery mode effect in the ZnO microrod.


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