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ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9362-6. doi: 10.1021/am4026505. Epub 2013 Sep 18.

Monolayer graphene/germanium Schottky junction as high-performance self-driven infrared light photodetector.

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School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, and ‡School of Materials Science and Engineering, Hefei University of Technology , Hefei, Anhui 230009, P. R. China.


We report on the simple fabrication of monolayer graphene (MLG)/germanium (Ge) heterojunction for infrared (IR) light sensing. It is found that the as-fabricated Schottky junction detector exhibits obvious photovoltaic characteristics, and is sensitive to IR light with high Ilight/Idark ratio of 2 × 10(4) at zero bias voltage. The responsivity and detectivity are as high as 51.8 mA W(-1) and 1.38 × 10(10) cm Hz(1/2) W(-1), respectively. Further photoresponse study reveals that the photovoltaic IR detector displays excellent spectral selectivity with peak sensitivity at 1400 nm, and a fast light response speed of microsecond rise/fall time with good reproducibility and long-term stability. The generality of the above results suggests that the present MLG/Ge IR photodetector would have great potential for future optoelectronic device applications.

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