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Adv Mater. 2013 Oct 18;25(39):5549-54. doi: 10.1002/adma201301102. Epub 2013 Aug 27.

High-performance nanowire oxide photo-thin film transistor.

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1
Samsung Advanced Institute of Technology, Samsung Electronics Co, Yongin-Si, Gyeonggi-Do, 446-712, Republic of Korea.

Abstract

A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10(6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.

KEYWORDS:

amorphous oxide semiconductors; displays; photosensors; phototransistors; thin-film transistors; transistors

PMID:
24038596
DOI:
10.1002/adma201301102
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