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Nanoscale. 2013 Oct 7;5(19):8915-20. doi: 10.1039/c3nr01847d. Epub 2013 Aug 14.

Sensing extremely limited H₂ contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor.

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Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.


A palladium (Pd) nanogap-based thin-film has been connected to an electrically stable amorphous InGaZnO thin-film transistor, to form a hydrogen sensor demonstrating a dramatic sensing capability. As a result of the Pd connection to the transistor source, our sensor circuit greatly enhances the hydrogen-induced signal and sensing speed in the sense of output voltage, clearly resolving a minimum hydrogen content of 0.05%. When the nanogap-based Pd thin-film was connected to the transistor gate, an extremely limited hydrogen content of even less than 0.05% was visibly detected through gate voltage shifts. Our results exhibit the most promising and practical ways to sense extremely limited hydrogen contents, originating from two methods: transistor-to-Pd nanogap resistor and transistor-to-Pd nanogap capacitor coupling.

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