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Nanotechnology. 2013 Sep 6;24(35):355203. doi: 10.1088/0957-4484/24/35/355203. Epub 2013 Aug 7.

High-performance nonvolatile Al/AlO(x)/CdTe:Sb nanowire memory device.

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School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.


Here we demonstrate a room temperature processed nonvolatile memory device based on an Al/AlO(x)/CdTe:Sb nanowire (NW) heterojunction. Electrical analysis shows an echelon hysteresis composed of a high-resistance state (HRS) and a low-resistance state (LRS), which can allow it to write and erase data from the device. The conductance ratio is as high as 10⁶, with a retention time of 3 × 10⁴ s. Moreover, the SET voltages ranged from +6 to +8 V, whilst the RESET voltage ∼0 V. In addition, flexible memory nano-devices on PET substrate with comparable switching performance at bending condition were fabricated. XPS analysis of the Al/AlO(x)/CdTe:Sb NW heterojunction after controlled Ar⁺ bombardment reveals that this memory behavior is associated with the presence of ultra-thin AlO(x) film. This Al/AlO(x)/CdTe:Sb NW heterojunction will open up opportunities for new memory devices with different configurations.

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