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Methods. 2013 Oct;63(3):212-8. doi: 10.1016/j.ymeth.2013.07.012. Epub 2013 Jul 22.

Ultra-sensitive nucleic acids detection with electrical nanosensors based on CMOS-compatible silicon nanowire field-effect transistors.

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State Key Laboratories of Transducer Technology and Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.


Silicon nanowire field-effect transistors (SiNW-FETs) have recently emerged as a type of powerful nanoelectronic biosensors due to their ultrahigh sensitivity, selectivity, label-free and real-time detection capabilities. Here, we present a protocol as well as guidelines for detecting DNA with complementary metal oxide semiconductor (CMOS) compatible SiNW-FET sensors. SiNWs with high surface-to-volume ratio and controllable sizes were fabricated with an anisotropic self-stop etching technique. Probe DNA molecules specific for the target DNA were covalently modified onto the surface of the SiNWs. The SiNW-FET nanosensors exhibited an ultrahigh sensitivity for detecting the target DNA as low as 1 fM and good selectivity for discrimination from one-base mismatched DNA.


(3-aminopropyl) triethoxysilane; APTES; Biosensor; CMOS; CMOS-compatible; CVD; I(DS); Nucleic acids; PCB; PECVD; SEM; SOI; SiNW-FETs; SiNWs; Silicon nanowire; TMAH; Ultra-sensitive; V(DS); V(GS); chemical vapor deposition; complementary metal oxide semiconductor; gate volotage; plasma enhanced chemical vapor deposition; printed circuit board; scanning electron microscopy; silicon nanowire field-effect transistors; silicon nanowires; silicon-on-insulator; source/drain current; source/drain voltage; tetramethylammonium hydroxide

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