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Nano Lett. 2013 Aug 14;13(8):3626-30. doi: 10.1021/nl4014748. Epub 2013 Jul 9.

Bandgap engineering of strained monolayer and bilayer MoS2.

Author information

1
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States.

Abstract

We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E' Raman mode of MoS2, and extract a Gr√ľneisen parameter of ~1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is approximately linear with strain, ~45 meV/% strain for monolayer MoS2 and ~120 meV/% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ~1%. These observations constitute a demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides.

PMID:
23819588
DOI:
10.1021/nl4014748

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