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Adv Mater. 2013 Sep 6;25(33):4663-7. doi: 10.1002/adma.201205098. Epub 2013 Jul 1.

High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films.

Author information

1
Department of Chemical Engineering, Stanford University, 359 N-S Axis Stauffer III, Stanford, CA 94303, USA.

Abstract

An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films.

KEYWORDS:

blend aligned crystals; complementary inverters; electron traps; grain boundaries; organic electronics

PMID:
23813467
DOI:
10.1002/adma.201205098

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