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ScientificWorldJournal. 2013 May 23;2013:126982. doi: 10.1155/2013/126982. Print 2013.

Growth and characterization of CuO nanostructures on Si for the fabrication of CuO/p-Si Schottky diodes.

Author information

1
Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay, Turkey. samedcetinkaya@gmail.com

Abstract

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. Conventional I-V and Norde's methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.

PMID:
23766670
PMCID:
PMC3677632
DOI:
10.1155/2013/126982
[Indexed for MEDLINE]
Free PMC Article

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