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Opt Express. 2013 May 20;21(10):12908-13. doi: 10.1364/OE.21.012908.

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.

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Department of Chemical & Biological Engineering, Korea University, Seoul 136-701 South Korea.


We report on a simple and reproducible method for fabricating InGaN/GaN multi-quantum-well (MQW) nanorod light-emitting diodes (LEDs), prepared by combining a SiO<sub>2</sub> nanosphere lithography and dry-etch process. Focused-ion-beam (FIB)-deposited Pt was contacted to both ends of the nanorod LEDs, producing bright electroluminescence from the LEDs under forward bias conditions. The turn-on voltage in these nanorod LEDs was higher (13 V) than in companion thin film devices (3 V) and this can be attributed to the high contact resistance between the FIB-deposited Pt and nanorod LEDs and the damage induced by inductively-coupled plasma and Ga + -ions. Our method to obtain uniform MQW nanorod LEDs shows promise for improving the reproducibility of nano-optoelectronics.

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