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Opt Express. 2013 May 20;21(10):11869-76. doi: 10.1364/OE.21.011869.

50-Gb/s ring-resonator-based silicon modulator.

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1
Photonics Electronics Technology Research Association, Japan. t-baba@petra-jp.org

Abstract

We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a V(π)L as small as 0.28 V · cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 V(pp) and 5.2 dB, respectively.

PMID:
23736409
[Indexed for MEDLINE]
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