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Langmuir. 2013 Jun 11;29(23):7143-50. doi: 10.1021/la401356u. Epub 2013 Jun 3.

Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors.

Author information

1
Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon 305-600, Republic of Korea. kjang@krict.re.kr

Abstract

We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semiconductor than is bare polyimde. The field-effect mobility and the on/off current ratio of the ZnO TFT with the YOx/polyimide gate insulator were 0.456 cm(2)/V·s and 2.12 × 10(6), respectively, whereas the ZnO TFT with the polyimide gate insulator was inactive.

PMID:
23724823
DOI:
10.1021/la401356u
[Indexed for MEDLINE]

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