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Nanoscale Res Lett. 2013 May 8;8(1):218. doi: 10.1186/1556-276X-8-218.

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.

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1
Key Laboratory of Instrumentation Science & Dynamic Measurement, North University of China, Ministry of Education, Shanxi, 030051, China. tangjun@nuc.edu.cn.

Abstract

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10-9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

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