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ACS Nano. 2013 Jun 25;7(6):5463-71. doi: 10.1021/nn4014774. Epub 2013 May 17.

Wafer-scale production of uniform InAs(y)P(1-y) nanowire array on silicon for heterogeneous integration.

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  • 1Korea Photonics Technology Institute, Gwangju 500-779, South Korea.


One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as the large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report the direct heteroepitaxial growth of a mixed anion ternary InAsyP1-y nanowire array across an entire 2 in. Si wafer with unprecedented spatial, structural, and special uniformity across the entire 2 in. wafer and dramatic improvements in aspect ratio (>100) and area density (>5 × 10(8)/cm(2)). Heterojunction solar cells consisting of n-type InAsyP1-y (y = 0.75) and p-type Si achieve a conversion efficiency of 3.6% under air mass 1.5 illumination. This work demonstrates the potential for large-scale production of these nanowires for heterogeneous integration of optoelectronic devices.

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