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Adv Mater. 2013 Jun 18;25(23):3222-6. doi: 10.1002/adma.201301113. Epub 2013 May 6.

Universal electric-field-driven resistive transition in narrow-gap Mott insulators.

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1
Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France. pablo-alberto.stoliar@u-psud.fr

Abstract

A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.

PMID:
23649904
DOI:
10.1002/adma.201301113
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