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Nano Lett. 2013 Jun 12;13(6):2418-22. doi: 10.1021/nl400305q. Epub 2013 May 8.

Atomic-scale engineering of the electrostatic landscape of semiconductor surfaces.

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1
Department of Physics, Ohio State University, Columbus, Ohio 43210, USA.

Abstract

A low-temperature scanning tunneling microscope was used in conjunction with density functional theory calculations to determine the binding sites and charge states of adsorbed Ga and Mn atoms on GaAs(110). To quantify the adatom charge states (both +1e), the Coulomb interaction with an individual Mn acceptor is measured via tunneling spectroscopy and compared with theoretical predictions. Several methods for positioning these charged adatoms are demonstrated, allowing us to engineer the electrostatic landscape of the surface with atomic precision.

PMID:
23647308
DOI:
10.1021/nl400305q
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