Send to

Choose Destination
Nano Lett. 2013 Jun 12;13(6):2490-5. doi: 10.1021/nl400544q. Epub 2013 May 2.

Carbon nanotube complementary wrap-gate transistors.

Author information

IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.


Among the challenges hindering the integration of carbon nanotube (CNT) transistors in digital technology are the lack of a scalable self-aligned gate and complementary n- and p-type devices. We report CNT transistors with self-aligned gates scaled down to 20 nm in the ideal gate-all-around geometry. Uniformity of the gate wrapping the nanotube channels is confirmed, and the process is shown not to damage the CNTs. Further, both n- and p-type transistors were realized by using the appropriate gate dielectric-HfO2 yielded n-type and Al2O3 yielded p-type-with quantum simulations used to explore the impact of important device parameters on performance. These discoveries not only provide a promising platform for further research into gate-all-around CNT devices but also demonstrate that scalable digital switches with realistic technological potential can be achieved with carbon nanotubes.


Supplemental Content

Full text links

Icon for American Chemical Society
Loading ...
Support Center