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Nanoscale Res Lett. 2013 Apr 26;8(1):193. doi: 10.1186/1556-276X-8-193.

Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon.

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1
College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000, China. zuozewen@126.com.

Abstract

Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that catalyzed using a thin one, which is suggested to be induced by the charge transport process. The thick Au mesh in contact with the Si produces a low Au/Si Schottky barrier height, facilitating the injection of electronic holes from the Au to the Si, thus resulting in a high etching rate.

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