A semiconductor detector coupled with a neutron converter is a good candidate for neutron detection, especially for its compactness and reliability if compared with other devices, such as (3)He tubes, even though its intrinsic efficiency is rather lower. In this paper we show a neutron detector design consisting of a 3 cm × 3 cm silicon pad detector coupled with one or two external (6)LiF layers, enriched in (6)Li at 95%, placed in contact with the Si active surfaces. This prototype, first characterized and tested at INFN Laboratori Nazionali del Sud and then at JRC Ispra, was successfully shown to detect thermal neutrons with the expected efficiency and an outstanding gamma rejection capability.