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Nanotechnology. 2013 Apr 12;24(14):145303. doi: 10.1088/0957-4484/24/14/145303. Epub 2013 Mar 18.

A new sequential EBID process for the creation of pure Pt structures from MeCpPtMe3.

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1
FEI Electron Optics, Achtseweg Noord 5, 5651GG Eindhoven, The Netherlands. shruti.mehendale@fei.com

Abstract

Electron beam induced deposition (EBID) is a process used for the fabrication of three-dimensional nanostructures of a variety of materials, but direct deposition of pure metallic structures has rarely been achieved. Typically, MeCpPtMe3 as a precursor for Pt leads to a carbon rich deposit with ~15 at.% Pt, which negatively affects its application as an electrical contact. We report a new process for Pt purification: in situ annealing with electron beam post-irradiation under oxygen flux, which can completely purify a thin (<100 nm) Pt EBID structure at substrate temperatures as low as 120 °C. We have developed a sequential method in which a thin Pt EBID structure is deposited on a previously purified structure and subsequently purified. The resistivity of the contact grown by this sequential procedure is observed to be ~70 ± 8 μΩ cm-only six times higher than that of pure bulk Pt. Thus, sequential deposition and purification proves to be an effective method for fabricating pure Pt structures of desired dimensions.

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