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Opt Express. 2013 Feb 25;21(4):4908-16. doi: 10.1364/OE.21.004908.

Photoluminescence emission and Raman response of monolayer MoS₂, MoSe₂, and WSe₂.

Author information

1
Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany.

Abstract

We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.

PMID:
23482024
DOI:
10.1364/OE.21.004908
[Indexed for MEDLINE]

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