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Nat Commun. 2013;4:1539. doi: 10.1038/ncomms2555.

A low-temperature method to produce highly reduced graphene oxide.

Author information

1
Department of Chemistry, Beijing Key Laboratory for Analytical Methods and Instrumentation, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology, Tsinghua University, Beijing 100084, China.

Erratum in

  • Nat Commun. 2013;4:1927.

Abstract

Chemical reduction of graphene oxide can be used to produce large quantities of reduced graphene oxide for potential application in electronics, optoelectronics, composite materials and energy-storage devices. Here we report a highly efficient one-pot reduction of graphene oxide using a sodium-ammonia solution as the reducing agent. The solvated electrons in sodium-ammonia solution can effectively facilitate the de-oxygenation of graphene oxide and the restoration of π-conjugation to produce reduced graphene oxide samples with an oxygen content of 5.6 wt%. Electrical characterization of single reduced graphene oxide flakes demonstrates a high hole mobility of 123 cm(2) Vs(-1). In addition, we show that the pre-formed graphene oxide thin film can be directly reduced to form reduced graphene oxide film with a combined low sheet resistance (~350 Ω per square with ~80% transmittance). Our study demonstrates a new, low-temperature solution processing approach to high-quality graphene materials with lowest sheet resistance and highest carrier mobility.

PMID:
23443567
DOI:
10.1038/ncomms2555

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