Numerical and experimental study of stochastic resistive switching

Phys Rev E Stat Nonlin Soft Matter Phys. 2013 Jan;87(1):012128. doi: 10.1103/PhysRevE.87.012128. Epub 2013 Jan 22.

Abstract

In this paper we study the role of noise in the context of resistive switching phenomena by means of experiments and numerical simulations. Experiments are conducted on a manganite sample. We show that the addition of external Gaussian noise to a small amplitude driving signal yields a contrast ratio between low- and high-resistance states, comparable to that obtained by the application of a large amplitude noiseless signal. Furthermore, excellent agreement between numerical simulation and measurement allows us to study resistive switching under varying input conditions and, thus, properly characterize the beneficial role of noise. We believe these results might be of relevance in the area of memory devices where the large scale of electronic integration renders the presence of noise unavoidable.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Algorithms*
  • Computer Simulation
  • Electric Impedance*
  • Models, Statistical*
  • Signal Processing, Computer-Assisted*
  • Stochastic Processes*