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Small. 2013 Jul 8;9(13):2255-9. doi: 10.1002/smll.201202051. Epub 2013 Feb 11.

Geometry-induced dislocations in coaxial heterostructural nanotubes.

Author information

1
Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 151-744, Korea.

Abstract

Highly localized dislocations in GaN/ZnO hetero-nanostructures are generated from the residual strain field by lattice mismatches at two interfaces: between the substrate and hetero-nanostructures, and between the ZnO core and GaN shell. The local strain field is measured using tranmission electron microscopy, and the relationship between the nanostructure morphology and the highly localized dislocations is analyzed by a finite element method.

KEYWORDS:

convergent beam electron diffraction; dislocations in nanostructures; finite element method; gallium nitride; transmission electron microscopy

PMID:
23401192
DOI:
10.1002/smll.201202051
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