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Opt Express. 2012 Dec 31;20(28):29338-46. doi: 10.1364/OE.20.029338.

A critically coupled Germanium photodetector under vertical illumination.

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Institute of Photonics Technologies, National Tsing-Hua University, Hsinchu, Taiwan.


We propose and study a practical design of a Germanium photodetector implemented on a Silicon-on-insulator substrate to reach the critical coupling regime under vertical illumination at 1310 nm wavelength. With appropriate optimization procedures, a high efficiency bandwidth product larger than 50 GHz and a large 3dB spectral full width around 30 nm can be obtained given realistic material parameters and fabrication constraints. Our device is fully compatible to the state-of-art CMOS process technology, and may serve as a high performance, low cost solution for the optical receiver in Silicon photonics based optical interconnects.

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