Format

Send to

Choose Destination
Adv Mater. 2013 May 14;25(18):2562-6. doi: 10.1002/adma.201204718. Epub 2013 Feb 6.

Structural and optoelectronic characterization of RF sputtered ZnSnN(2).

Author information

1
Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA.

Abstract

ZnSnN(2), a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2(1) crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.

PMID:
23386387
DOI:
10.1002/adma.201204718

LinkOut - more resources

Full Text Sources

Other Literature Sources

Supplemental Content

Full text links

Icon for Wiley
Loading ...
Support Center