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Nanoscale Res Lett. 2013 Jan 14;8(1):27. doi: 10.1186/1556-276X-8-27.

Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate.

Author information

  • 1Department of Physics, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China. juneguo@henu.edu.cn.

Abstract

We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules.

PMID:
23316901
PMCID:
PMC3552715
DOI:
10.1186/1556-276X-8-27
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