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Nanoscale Res Lett. 2012 Dec 17;7(1):677. doi: 10.1186/1556-276X-7-677.

Investigation of electronic properties of graphene/Si field-effect transistor.

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School of Mathematics and Physics, Suzhou University of Science and Technology, 1# Kerui Road of Gaoxin Section, Suzhou, Jiangsu 215011, China.


We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, gm, of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is up to 100. Moreover, the output properties of the graphene transistor show significant current saturation, and the graphene transistor can be modulated using the local graphene gate. These results clearly show that the device is well suited for analog applications.

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