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Opt Express. 2012 Oct 22;20(22):25085-95. doi: 10.1364/OE.20.025085.

Ytterbium-doped fibers fabricated with atomic layer deposition method.

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Aalto University School of Electrical Engineering, Tietotie 3, FIN-02015 Finland.


We report on a new fabrication method of producing ytterbium doped fibers by atomic layer deposition (ALD) in combination with the conventional modified chemical vapor deposition (MCVD) technique. An MCVD soot-preform with a porous layer of SiO(2) is coated with layers of Yb(2)O(3) and Al(2)O(3) prior to sintering, using the gas-phase ALD method. An SEM/EDS material analysis study shows that the dopants successfully penetrate the full thickness of 320 µm of the soot layer. An Yb-doped fiber fabricated by this technique shows a background attenuation of 20 dB/km, a uniform longitudinal Yb-doping profile, and good laser characteristics with a slope efficiency of 80%. Furthermore, we present a comparison in terms of photodarkening between the MCVD-ALD fiber and a solution doped fiber, fabricated with the same MCVD recipe. The new MCVD-ALD fiber appears to be more photodarkening resistant.


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