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Appl Opt. 2012 Nov 10;51(32):7826-33. doi: 10.1364/AO.51.007826.

Bulk laser-induced damage threshold of titanium-doped sapphire crystals.

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Aix Marseille Université, CNRS, LP3 UMR 7341, Marseille, France.


The bulk laser-induced damage threshold (LIDT) fluence of Ti:sapphire is determined under single-pulse irradiation from the femtosecond to nanosecond temporal regimes in the visible and near-infrared spectral domains. In the range of explored laser conditions, the LIDT fluence increases with both pulse duration and wavelength. The results are also compared to laser interaction with sapphire samples and show an increased resistance to laser damage when the material is doped with Ti(3+) ions. These conclusions are of interest for robust operation of high-peak-power femtosecond Ti:sapphire laser chains.


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